Silicon alpha detectors

ORTEC C Series

Annular partially depleted surface-barrier detectors

Detector type

Annular partially depleted silicon surface barrier

ORTEC B Series

Totally depleted silicon surface-barrier detectors

Detector type

Totally depleted silicon surface barrier

ORTEC A Series

Partially depleted silicon surface-barrier detectors

Detector type

Partially depleted silicon surface barrier

ORTEC R Series

Ruggedized silicon surface-barrier detectors

ORTEC ULTRA-AS

Low-background silicon detectors for alpha spectroscopy

Detector type

Ion-implanted silicon, partially depleted

Active depth

≈100 µm

ORTEC ULTRA

Ion-implanted silicon detectors for alpha spectroscopy

Detector type

Ion-implanted silicon, partially depleted

ORTEC F Series

Partially depleted silicon surface-barrier detectors for heavy ions

Detector type

Partially depleted silicon surface barrier

Active area

100, 300, 400, 600 or 900 mm²

Depletion depth

≥60 µm, partially depleted; greater depths on special order

ORTEC D Series

Totally depleted silicon surface-barrier detectors for time-of-flight

Detector type

Planar, totally depleted silicon surface barrier

Active area

10, 50, 150, 300 or 450 mm² (10 mm² only at 15 µm depth); larger areas on special order

Depletion depth

Nominal 15, 25, 40, 50, 75 or 100 µm (ranges 7–15, 15.1–25, 25.1–40, 40.1–65, 65.1–85 and 85.1–110 µm)

ORTEC kiseldetektorer för alfaspektrometri

Silicon detectors for alpha spectrometry

Detector type

ULTRA/ULTRA-AS: ion-implanted silicon; R: ruggedized silicon surface barrier

Depletion depth

ULTRA and R: minimum 100/300/500 µm depending on model; ULTRA-AS: approximately 100 µm

Energy resolution, example model

BU-020-450-AS: ≤20 keV FWHM at 5.486 MeV (²⁴¹Am), ORTEC electronics, 1 µs shaping; measured and warranted at 21 ±1 °C