
ORTEC C Series
Annular partially depleted surface-barrier detectors
- Detector type
- Annular partially depleted silicon surface barrier
Bild: ORTEC
Silicon detectors for alpha spectrometry
Silicon charged-particle detectors for alpha spectrometry, from low-background ion-implanted models to ruggedized surface-barrier detectors.
Download product sheet (PDF)All values with references – for tender documents
Specifications checked against the manufacturer’s documents on 2026-10-16
The number after each value refers to the source listed below. Values are as published by the manufacturer; the exact configuration is always confirmed in our quotation.
| Detector type | ULTRA/ULTRA-AS: ion-implanted silicon; R: ruggedized silicon surface barrier1 |
|---|---|
| Active detector area | ULTRA: 25–3000 mm²; R: 50–2000 mm²; example BU-020-450-AS: 450 mm²1 |
| Depletion depth | ULTRA and R: minimum 100/300/500 µm depending on model; ULTRA-AS: approximately 100 µm2 |
| Energy resolution, example model | BU-020-450-AS: ≤20 keV FWHM at 5.486 MeV (²⁴¹Am), ORTEC electronics, 1 µs shaping; measured and warranted at 21 ±1 °C2 |
| Bias polarity | ULTRA/ULTRA-AS: positive; R: negative2 |
| Mounts/connections | B: rear Microdot; C: rear BNC; T: side Microdot, ULTRA/AS up to 600 mm²2 |
| Alpha Suite compatibility | Guaranteed: B-mount ULTRA-AS and low-background R; others require approved special configuration2 |
| Measurement environment | R Series: vacuum or air with ambient light3 |
The data comes from the manufacturer’s published documents. Manufacturers may change specifications; the current configuration and performance are confirmed in the quotation.
The number after each value refers to the source listed below. Values are as published by the manufacturer; the exact configuration is always confirmed in our quotation.

Annular partially depleted surface-barrier detectors

Totally depleted silicon surface-barrier detectors

Partially depleted silicon surface-barrier detectors

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